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K4S28323LF-F Datasheet, Samsung semiconductor

K4S28323LF-F 90fbga equivalent, 1m x 32bit x 4 banks mobile sdram in 90fbga.

K4S28323LF-F Avg. rating / M : 1.0 rating-11

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K4S28323LF-F Datasheet

Features and benefits


* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3.

Application

ORDERING INFORMATION Part No. K4S28323LF-F(H)E/N/S/C/L/R60 K4S28323LF-F(H)E/N/S/C/L/R75 K4S28323LF-F(H)E/N/S/C/L/R1H K.

Description

The K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system .

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